图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Package / Case | Capacitance @ Vr, F | Supplier Device Package | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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S3D10065IDIODE SCHOTTKY SILICON CARBIDE S |
8,277 | 4.16 |
立即询盘 |
![]() Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 621pF @ 0V, 1MHz | 0 ns | 20 µA @ 650 V | 650 V | 10A | -55°C ~ 175°C | 1.7 V @ 10 A | |||
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S3D10065D1DIODE SCHOTTKY SILICON CARBIDE S |
9,776 | 4.20 |
立即询盘 |
![]() Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 621pF @ 0V, 1MHz | 0 ns | 20 µA @ 650 V | 650 V | 10A | -55°C ~ 175°C | 1.7 V @ 10 A | |||
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S4D08120ADIODE SCHOTTKY SILICON CARBIDE S |
6,839 | 4.31 |
立即询盘 |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 560pF @ 0V, 1MHz | 0 ns | 15 µA @ 1200 V | 1200 V | 8A | -55°C ~ 175°C | 1.8 V @ 8 A | ||||
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STD20150TRDIODE SCHOTTKY 150V DPAK |
6,499 | 1.02 |
立即询盘 |
![]() Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 150 V | 150 V | - | -55°C ~ 150°C | 1.55 V @ 20 A | |||
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ST2045AXTRDIODE SCHOTTKY 45V R-6 |
7,289 | 1.15 |
立即询盘 |
![]() Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 1.2 mA @ 45 V | 45 V | - | -55°C ~ 150°C | 580 mV @ 20 A | |||
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S4D10120ADIODE SCHOTTKY SILICON CARBIDE S |
9,348 | 6.60 |
立即询盘 |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 772pF @ 0V, 1MHz | 0 ns | 30 µA @ 1200 V | 1200 V | 10A | -55°C ~ 175°C | 1.8 V @ 10 A | ||||
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S3D20065HDIODE SCHOTTKY SILICON CARBIDE S |
7,401 | 6.79 |
立即询盘 |
![]() Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1200pF @ 0V, 1MHz | 0 ns | 30 µA @ 650 V | 650 V | 20A | -55°C ~ 175°C | 1.7 V @ 10 A | |||
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S3D20065ADIODE SCHOTTKY SILICON CARBIDE S |
8,111 | 7.06 |
立即询盘 |
![]() Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1200pF @ 0V, 1MHz | 0 ns | 30 µA @ 650 V | 650 V | 20A | -55°C ~ 175°C | 1.7 V @ 10 A | |||
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S4D10120HDIODE SCHOTTKY SILICON CARBIDE S |
6,093 | 7.13 |
立即询盘 |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 772pF @ 0V, 1MHz | 0 ns | 30 µA @ 1200 V | 1200 V | 10A | -55°C ~ 175°C | 1.8 V @ 10 A | ||||
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S4D15120ADIODE SCHOTTKY SILICON CARBIDE S |
8,292 | 7.42 |
立即询盘 |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1200pF @ 0V, 1MHz | 0 ns | 35 µA @ 1200 V | 1200 V | 15A | -55°C ~ 175°C | 1.8 V @ 15 A | ||||
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S4D15120HDIODE SCHOTTKY SILICON CARBIDE S |
6,743 | 7.89 |
立即询盘 |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1200pF @ 0V, 1MHz | 0 ns | 35 µA @ 1200 V | 1200 V | 15A | -55°C ~ 175°C | 1.8 V @ 15 A | ||||
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SB2150TADIODE SCHOTTKY 150V DO15 |
14,650 | 0.44 |
立即询盘 |
![]() Datasheet |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 140pF @ 5V, 1MHz | - | 1 mA @ 150 V | 150 V | - | -55°C ~ 150°C | 880 mV @ 2 A | |||
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MBR560STRDIODE SCHOTTKY 60V TO277B |
13,225 | 0.44 |
立即询盘 |
![]() Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 150 µA @ 60 V | 60 V | - | -55°C ~ 150°C | 670 mV @ 5 A | |||
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SK515BTRDIODE SCHOTTKY 150V SMB |
11,740 | 0.44 |
立即询盘 |
![]() Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 200pF @ 4V, 1MHz | - | 1 mA @ 150 V | 150 V | - | -55°C ~ 150°C | 930 mV @ 5 A | |||
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SB2100TADIODE SCHOTTKY 100V DO15 |
11,717 | 0.44 |
立即询盘 |
![]() Datasheet |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 140pF @ 5V, 1MHz | - | 500 µA @ 100 V | 100 V | - | -55°C ~ 150°C | 850 mV @ 2 A | |||
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S3D06065ADIODE SCHOTTKY SILICON CARBIDE S |
7,069 | 2.38 |
立即询盘 |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 382pF @ 0V, 1MHz | 0 ns | 8 µA @ 650 V | 650 V | 6A | -55°C ~ 175°C | 1.7 V @ 6 A | ||||
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S3D06065IDIODE SCHOTTKY SILICON CARBIDE S |
6,311 | 2.83 |
立即询盘 |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 382pF @ 0V, 1MHz | 0 ns | 8 µA @ 650 V | 650 V | 6A | -55°C ~ 175°C | 1.7 V @ 6 A | ||||
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S4D04120ADIODE SCHOTTKY SILICON CARBIDE S |
7,471 | 3.12 |
立即询盘 |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 302pF @ 0V, 1MHz | 0 ns | 20 µA @ 1200 V | 1200 V | 4A | -55°C ~ 175°C | 1.8 V @ 4 A | ||||
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S4D05120ADIODE SCHOTTKY SILICON CARBIDE S |
9,529 | 3.21 |
立即询盘 |
![]() Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 302pF @ 0V, 1MHz | 0 ns | 20 µA @ 1200 V | 1200 V | 5A | -55°C ~ 175°C | 1.8 V @ 5 A | |||
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SDURD540TRDIODE GEN PURP 300V DPAK |
10,887 | 0.45 |
立即询盘 |
![]() Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 45 ns | 30 µA @ 300 V | 300 V | - | -55°C ~ 150°C | 1.3 V @ 5 A |