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| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Package / Case | Capacitance @ Vr, F | Supplier Device Package | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SDUR2020DIODE GEN PURP 200V TO220AC |
5,865 | 1.19 |
立即询盘 |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 15 µA @ 200 V | 200 V | - | -55°C ~ 150°C | 1.15 V @ 20 A | |||
|
SDURB820TRDIODE GEN PURP 200V 8A D2PAK |
11,035 | 0.66 |
立即询盘 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 5 µA @ 200 V | 200 V | 8A | -55°C ~ 150°C | 1.2 V @ 8 A | |||
|
SDURK10Q60TB600V FRD,10A,PACKAGE ITO-220AC-2 |
13,218 | 0.66 |
立即询盘 |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 10 µA @ 600 V | 600 V | 10A | -55°C ~ 150°C | 2.3 V @ 10 A | |||
|
SDURF1060DIODE GEN PURP 600V ITO220AC |
10,385 | 0.67 |
立即询盘 |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 32 ns | 10 µA @ 600 V | 600 V | - | -55°C ~ 150°C | 2.2 V @ 10 A | |||
|
SDURF1040DIODE GEN PURP 400V ITO220AC |
14,735 | 0.67 |
立即询盘 |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 45 ns | 10 µA @ 400 V | 400 V | - | -55°C ~ 150°C | 1.3 V @ 10 A | |||
|
SDURF1020DIODE GEN PURP 200V ITO220AC |
12,150 | 0.68 |
立即询盘 |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 5V, 1MHz | 35 ns | 15 µA @ 200 V | 200 V | - | -55°C ~ 150°C | 1.15 V @ 10 A | |||
|
|
20TQ035STR20A, 35V, D2PAK, SCHOTTKY RECTIF |
7,335 | 1.34 |
立即询盘 |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 683pF @ 5V, 1MHz | - | 2.7 mA @ 35 V | 35 V | 20A | -55°C ~ 150°C | 570 mV @ 20 A | ||||
|
|
SDUR60Q60WTTB600V FRD,60A,PACKAGE TO-247AD |
9,191 | 2.50 |
立即询盘 |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 40 ns | 10 µA @ 600 V | 600 V | 30A | -55°C ~ 150°C | 1.8 V @ 30 A | |||
|
|
SDURF1030DIODE GEN PURP 300V ITO220AC |
13,936 | 0.69 |
立即询盘 |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 30 µA @ 300 V | 300 V | - | -55°C ~ 150°C | 1.3 V @ 10 A | |||
|
|
SDUR840DIODE GEN PURP 400V TO220AC |
11,924 | 0.70 |
立即询盘 |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 45 ns | 10 µA @ 400 V | 400 V | - | -55°C ~ 150°C | 1.3 V @ 8 A | |||
|
|
SDUR820DIODE GEN PURP 200V TO220AC |
11,509 | 0.70 |
立即询盘 |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 5 µA @ 200 V | 200 V | - | -55°C ~ 150°C | 1.2 V @ 8 A | |||
|
|
S4D05120GTRDIODE SCHOTTKY SILICON CARBIDE S |
7,446 | 2.92 |
立即询盘 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 302pF @ 0V, 1MHz | 0 ns | 20 µA @ 1200 V | 1200 V | 5A | -55°C ~ 175°C | 1.8 V @ 5 A | |||
|
|
S3D06065LTRDIODE SCHOTTKY SILICON CARBIDE S |
9,977 | 2.95 |
立即询盘 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 382pF @ 0V, 1MHz | - | 3 µA @ 650 V | 650 V | 24A | -55°C ~ 175°C | 1.7 V @ 6 A | |||
|
SDUR60Q60W600V30AUFRPACKAGE TO-247AC |
7,058 | 2.97 |
立即询盘 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 40 ns | 25 µA @ 600 V | 600 V | 60A | -55°C ~ 175°C | 2.4 V @ 60 A | ||||
|
|
S4D04120ETRDIODE SCHOTTKY SILICON CARBIDE S |
9,314 | 3.00 |
立即询盘 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 302pF @ 0V, 1MHz | 0 ns | 20 µA @ 1200 V | 1200 V | 4A | -55°C ~ 175°C | 1.8 V @ 4 A | |||
|
|
S4D05120ETRDIODE SCHOTTKY SILICON CARBIDE S |
9,642 | 3.07 |
立即询盘 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 302pF @ 0V, 1MHz | 0 ns | 20 µA @ 1200 V | 1200 V | 5A | -55°C ~ 175°C | 1.8 V @ 5 A | |||
|
|
SICRF6650DIODE SCHOTTKY SILICON CARBIDE S |
7,110 | 2.24 |
立即询盘 |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 150pF @ 5V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 6A | -55°C ~ 175°C | 1.8 V @ 6 A | |||
|
|
SICR6650DIODE SCHOTTKY SILICON CARBIDE S |
6,793 | 2.24 |
立即询盘 |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 150pF @ 5V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 6A | -55°C ~ 175°C | 1.8 V @ 6 A | |||
|
SICRF5650DIODE SCHOTTKY SILICON CARBIDE S |
6,614 | 3.21 |
立即询盘 |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | - | 0 ns | 60 µA @ 650 V | 650 V | 5A | -55°C ~ 175°C | 1.7 V @ 5 A | |||
|
SICR10650CTDIODE SCHOTTKY SILICON CARBIDE S |
5,890 | 3.21 |
立即询盘 |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | - | 0 ns | 60 µA @ 650 V | 650 V | 5A | -55°C ~ 175°C | 1.7 V @ 5 A |
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