晶体管-场效应晶体管，MOSFET-射频 - 诺亚方舟半导体（深圳）有限公司

型号	库存	价格	数量	规格书	Packaging	Series	ProductStatus	TransistorType	Frequency	Gain	Voltage-Test	CurrentRating(Amps)	NoiseFigure	Current-Test	Power-Output	Voltage-Rated
BLF7G27LS-90P,112 RF PFET, 2-ELEMENT, S BAND, SILI NXP USA Inc.	1,545	64.88	立即询盘	Datasheet	Tube	-	Active	LDMOS (Dual), Common Source	2.5GHz ~ 2.7GHz	18.5dB	28 V	18A	-	720 mA	16W	65 V
BLF8G10LS-270,112 RF PFET, 1-ELEMENT, ULTRA HIGH F NXP USA Inc.	4,769	75.82	立即询盘	Datasheet	Tube	-	Active	LDMOS	820MHz ~ 960MHz	18.5dB	28 V	4.2µA	-	2 A	270W	65 V
BLF6G20-110,112 RF TRANSISTOR NXP USA Inc.	2,711	77.55	立即询盘	Datasheet	Tray	-	Obsolete	LDMOS	1.93GHz ~ 1.99GHz	19dB	28 V	29A	-	900 mA	25W	65 V
BLF7G27L-100,112 RF TRANSISTOR NXP USA Inc.	3,653	80.08	立即询盘	Datasheet	Tube	-	Obsolete	LDMOS	2.5GHz ~ 2.7GHz	18dB	28 V	28A	-	900 mA	20W	65 V
BLF6G27LS-75,112 RF TRANSISTOR NXP USA Inc.	2,643	83.43	立即询盘	Datasheet	Tray	-	Obsolete	LDMOS	-	-	28 V	18A	-	600 mA	9W	65 V
BLF8G10LS-270V,112 RF PFET, 1-ELEMENT, ULTRA HIGH F NXP USA Inc.	1,699	84.57	立即询盘	Datasheet	Tube	-	Active	LDMOS	871.5MHz ~ 891.5MHz	19.5dB	28 V	-	-	2 A	67W	65 V
BLD6G22L-50,112 RF TRANSISTOR NXP USA Inc.	2,624	85.05	立即询盘	Datasheet	Tray	-	Obsolete	LDMOS (Dual), Common Source	2.14GHz	14dB	28 V	10.2A	-	170 mA	8W	65 V
BLD6G21L-50,112 RF TRANSISTOR NXP USA Inc.	3,624	85.05	立即询盘	Datasheet	Tray	-	Obsolete	LDMOS (Dual), Common Source	2.02GHz	14.5dB	28 V	10.2A	-	170 mA	8W	65 V
CLF1G0060S-10U RF SMALL SIGNAL FIELD-EFFECT TRA NXP USA Inc.	1,748	87.51	立即询盘	Datasheet	Bulk	-	Active	GaN HEMT	3GHz ~ 3.5GHz	14.5dB	50 V	-	-	50 mA	10W	150 V
BLF6G10LS-135R,112 RF TRANSISTOR NXP USA Inc.	2,789	87.91	立即询盘	Datasheet	Tray	-	Obsolete	LDMOS	871.5MHz ~ 891.5MHz	21dB	28 V	32A	-	950 mA	26.5W	65 V
BLD6G22LS-50,112 RF TRANSISTOR NXP USA Inc.	2,189	90.08	立即询盘	Datasheet	Tray	-	Obsolete	LDMOS (Dual), Common Source	2.14GHz	14dB	28 V	10.2A	-	170 mA	8W	65 V
BLF7G10L-250,112 RF PFET, 1-ELEMENT, ULTRA HIGH F NXP USA Inc.	398	102.56	立即询盘	Datasheet	Tube	-	Active	LDMOS	920MHz ~ 960MHz	19.5dB	30 V	-	-	1.8 A	60W	65 V
BLF7G10LS-250,112 N-CHANNEL, MOSFET NXP USA Inc.	840	103.21	立即询盘	Datasheet	Tube	-	Active	LDMOS	869MHz ~ 960MHz	19.5dB	30 V	5µA	-	1.8 A	250W	65 V
BLF7G27LS-140,112 RF PFET, 1-ELEMENT, S BAND, SILI NXP USA Inc.	583	108.63	立即询盘	Datasheet	Tube	-	Active	LDMOS	2.5GHz ~ 2.7GHz	16.5dB	28 V	28A	-	1.3 A	30W	65 V
BLF7G27L-150P,112 RF TRANSISTOR NXP USA Inc.	3,548	111.33	立即询盘	Datasheet	Tube	-	Obsolete	LDMOS (Dual), Common Source	2.5GHz ~ 2.7GHz	16.5dB	28 V	37A	-	1.2 A	30W	65 V
BLF7G24L-160P,112 RF TRANSISTOR NXP USA Inc.	3,376	113.82	立即询盘	Datasheet	Tube	-	Obsolete	LDMOS (Dual), Common Source	2.3GHz ~ 2.4GHz	18.5dB	28 V	-	-	1.2 A	30W	65 V
BLF2425M7LS140,112 RF PFET, 1-ELEMENT, S BAND, SILI NXP USA Inc.	575	117.52	立即询盘	Datasheet	Tube	-	Active	LDMOS	2.45GHz	18.5dB	28 V	-	-	1.3 A	140W	65 V
BLF7G24LS-160P,112 RF PFET, 2-ELEMENT, S BAND, SILI NXP USA Inc.	534	120.55	立即询盘	Datasheet	Tube	-	Active	LDMOS (Dual), Common Source	2.3GHz ~ 2.4GHz	18.5dB	28 V	-	-	1.2 A	30W	65 V
BLF7G22LS-250P,112 N-CHANNEL, MOSFET NXP USA Inc.	753	133.68	立即询盘	Datasheet	Tube	-	Active	LDMOS (Dual), Common Source	2.11GHz ~ 2.17GHz	18.5dB	28 V	2.8µA	-	1.9 A	250W	65 V
MRF6VP3450HSR5-NXP RF ULTRA HIGH FREQUENCY BAND, N- NXP USA Inc.	970	207.80	立即询盘	Datasheet	Bulk	-	Active	LDMOS (Dual)	470MHz ~ 860MHz	22.5dB	50 V	10µA	-	1.4 A	450W	110 V

共400记录«上一页 1 2 3 4 567 8 9...20 下一页»