图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BUK9K13-40HXBUK9K13-40H - DUAL N-CHANNEL 40 |
6,403 | 1.34 |
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Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchMOS™ | Active | 2 N-Channel (Dual) | Logic Level Gate | 40V | 42A (Ta) | 13.6mOhm @ 10A, 10V | 2.2V @ 1mA | 19.4nC @ 10V | 1160pF @ 25V | 46W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount |
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BUK98150-55/CUPFET, 5.5A I(D), 55V, 0.15OHM, 1 |
7,123 | 1.00 |
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BUK963R2-40BPFET, 100A I(D), 40V, 0.0035OHM |
11,035 | 0.00 |
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BUK7E8R3-40E12775A, 40V, 0.0074OHM, N CHANNEL |
10,679 | 0.00 |
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BUK762R0-40CPFET, 276A I(D), 40V, 0.00375OHM |
5,998 | 1.00 |
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PMV20XNEA,2156.3A, 20V, N CHANNEL, SILICON, M |
9,139 | 1.00 |
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PSMN4R8-100BSE,118N CHANNEL 100V 4.8 MOHM STANDAR |
6,535 | 1.00 |
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PSMN8R5-100ESPOWER FIELD-EFFECT TRANSISTOR, 1 |
6,305 | 1.00 |
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PSMN5R0-100ES127120A, 100V, 0.005OHM, N CHANNE |
6,922 | 1.00 |
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NX7002BKW,1150.24A, 60V, N CHANNEL MOSFET, SC |
9,147 | 1.00 |
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PMV50ENEA,2153.9A, 30V, N CHANNEL, SILICON, M |
6,375 | 1.00 |
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PMV28UNEA,2152.9A, 20V, N CHANNEL, SILICON, M |
8,051 | 1.00 |
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PMV100ENEA,2153A, 30V, N CHANNEL, SILICON, MOS |
8,637 | 1.00 |
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PMT280ENEA,1151.5A, 100V, N CHANNEL, SILICON |
13,018 | 0.00 |
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PHK31NQ03LTPOWER FIELD-EFFECT TRANSISTOR, 3 |
8,990 | 1.00 |
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PMV30XPEA,2154.5A, 20V, P CHANNEL, SILICON, M |
9,082 | 1.00 |
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PMN42XPEA,1254A, 20V, 6-ELEMENT, P CHANNEL, S |
6,341 | 1.00 |
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PMXB43UNE,14720V, N CHANNEL TRENCH MOSFET |
5,036 | 1.00 |
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PMV27UPEA,2154.5A, 20V, P CHANNEL, SILICON, M |
6,156 | 1.00 |
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PSMN2R0-60ESELEMENT, NCHANNEL, SILICON, MOSF |
6,632 | 1.00 |
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