图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Package / Case | Capacitance @ Vr, F | Supplier Device Package | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MUR550PFDIODE GEN PURP 520V 5A TO220AC |
12,672 | 0.37 |
立即询盘 |
![]() Datasheet |
Tube,Tube | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 95 ns | 5 µA @ 520 V | 520 V | 5A | -65°C ~ 175°C | 1.15 V @ 5 A | ||
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MUR550PFGDIODE GEN PURP 520V 5A TO220AC |
13,453 | 0.43 |
立即询盘 |
![]() Datasheet |
Bulk,Tube | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 95 ns | 5 µA @ 520 V | 520 V | 5A | -65°C ~ 175°C | 1.15 V @ 5 A | ||
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1N4933DIODE GEN PURP 50V 1A DO41 |
14,042 | 0.02 |
立即询盘 |
![]() Datasheet |
Bulk,Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 300 ns | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 150°C | 1.2 V @ 1 A | |||
|
MBR360DIODE SCHOTTKY 60V 3A DO201AD |
11,960 | 0.09 |
立即询盘 |
![]() Datasheet |
Bulk,Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 600 µA @ 60 V | 60 V | 3A | -65°C ~ 150°C | 740 mV @ 3 A | |||
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MUR120DIODE GEN PURP 200V 1A AXIAL |
12,645 | 0.07 |
立即询盘 |
![]() Datasheet |
Bulk,Bulk | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 35 ns | 2 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 875 mV @ 1 A | ||
|
MUR420DIODE GEN PURP 200V 4A DO201AD |
10,687 | 0.24 |
立即询盘 |
![]() Datasheet |
Bulk,Bulk | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 35 ns | 5 µA @ 200 V | 200 V | 4A | -65°C ~ 175°C | 890 mV @ 4 A | ||
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RD1006LS-SB5DIODE GEN PURP 10A TO220FI |
9,645 | 1.26 |
立即询盘 |
![]() Datasheet |
Tube,Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 50 ns | 100 µA @ 600 V | - | 10A | 150°C (Max) | 1.6 V @ 10 A | |||
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SB1003M3-TL-EDIODE SCHOTTKY 30V 1A 3MCPH |
11,892 | 0.12 |
立即询盘 |
![]() Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 27pF @ 10V, 1MHz | 10 ns | 15 µA @ 16 V | 30 V | 1A | 125°C (Max) | 530 mV @ 1 A | |||
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HFA08TB60PBFDIODE GEN PURP 600V 8A TO220AC |
13,885 | 0.50 |
立即询盘 |
![]() Datasheet |
Bulk,Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 55 ns | 5 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.7 V @ 8 A | ||
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NRVBB1645T4GDIODE SCHOTTKY 45V 16A D2PAK |
10,337 | 0.80 |
立即询盘 |
![]() Datasheet |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 45 V | 45 V | 16A | -65°C ~ 175°C | 630 mV @ 16 A | ||
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IDH10G65C5XKSA1DIODE SCHOTTKY 650V 10A TO220-2 |
6,985 | 2.69 |
立即询盘 |
![]() Datasheet |
Bulk,Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 300pF @ 1V, 1MHz | 0 ns | 340 µA @ 650 V | 650 V | 10A (DC) | -55°C ~ 175°C | 1.7 V @ 10 A | ||
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IDH08G65C5XKSA1DIODE SCHOTTKY 650V 8A TO220-2 |
6,964 | 2.15 |
立即询盘 |
![]() Datasheet |
Bulk,Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 250pF @ 1V, 1MHz | 0 ns | 280 µA @ 650 V | 650 V | 8A (DC) | -55°C ~ 175°C | 1.7 V @ 8 A | ||
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IDW30G65C5FKSA1DIODE SCHOTTKY 650V 30A TO247-3 |
8,864 | 8.29 |
立即询盘 |
![]() Datasheet |
Tube,Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 860pF @ 1V, 1MHz | 0 ns | 1.1 mA @ 650 V | 650 V | 30A (DC) | -55°C ~ 175°C | 1.7 V @ 30 A | ||
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IDH03G65C5XKSA1DIODE SCHOTTKY 650V 3A TO220-2 |
12,572 | 0.87 |
立即询盘 |
![]() Datasheet |
Tube,Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 100pF @ 1V, 1MHz | 0 ns | 50 µA @ 600 V | 650 V | 3A (DC) | -55°C ~ 175°C | 1.7 V @ 3 A | ||
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IDW12G65C5FKSA1DIODE SCHOTTKY 650V 12A TO247-3 |
8,427 | 3.11 |
立即询盘 |
![]() Datasheet |
Tube,Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 360pF @ 1V, 1MHz | 0 ns | 500 µA @ 650 V | 650 V | 12A (DC) | -55°C ~ 175°C | 1.7 V @ 12 A | ||
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IDH09G65C5XKSA1DIODE SCHOTTKY 650V 9A TO220-2 |
5,546 | 2.18 |
立即询盘 |
![]() Datasheet |
Tube,Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 270pF @ 1V, 1MHz | 0 ns | 310 µA @ 650 V | 650 V | 9A (DC) | -55°C ~ 175°C | 1.7 V @ 9 A | ||
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DLE30CDIODE GEN PURP 200V 3A AXIAL |
14,427 | 0.63 |
立即询盘 |
![]() Datasheet |
Bulk,Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 35 ns | 10 µA @ 400 V | 200 V | 3A | 150°C (Max) | 980 mV @ 3 A | |||
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DLE30C-KC9DIODE GEN PURP 200V 3A AXIAL |
14,376 | 0.63 |
立即询盘 |
![]() Datasheet |
Bulk,Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 35 ns | 10 µA @ 400 V | 200 V | 3A | 150°C (Max) | 980 mV @ 3 A | |||
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DLE30EDIODE GEN PURP 400V 3A AXIAL |
13,278 | 0.66 |
立即询盘 |
![]() Datasheet |
Bulk,Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 30 ns | 20 µA @ 400 V | 400 V | 3A | 150°C (Max) | 1.25 V @ 1 A | |||
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DLM10CDIODE GEN PURP 200V 1A DO204AL |
11,340 | 0.25 |
立即询盘 |
![]() Datasheet |
Bulk,Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 35 ns | 10 µA @ 200 V | 200 V | 1A | 150°C (Max) | 980 mV @ 1 A |