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| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Package / Case | Capacitance @ Vr, F | Supplier Device Package | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
LSIC2SD065C06ASIC SCHOTTKY DIODE 650V 6A TO252 |
6,875 | 3.98 |
立即询盘 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Gen2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 300pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 18.5A (DC) | -55°C ~ 175°C | 1.8 V @ 6 A | ||
|
LSIC2SD120C05ASIC SCHOTTKY DIODE 1200V 05A TO2 |
9,536 | 5.72 |
立即询盘 |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||||
|
LSIC2SD065E40CCADIODE SCHOTTKY SIC 650V 20A DUAL |
4,292 | 20.92 |
立即询盘 |
Datasheet |
Tube | Automotive, AEC-Q101, GEN2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 960pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 45A (DC) | -55°C ~ 175°C | 1.8 V @ 20 A | ||
|
LSIC2SD065C16ASIC SCHOTTKY DIOD 650V 16A TO252 |
7,284 | 8.81 |
立即询盘 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Gen2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 730pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 38A (DC) | -55°C ~ 175°C | 1.8 V @ 16 A | ||
|
JBPT13802Z2R-NCJUNCTION BLOCK HIGH CURRENT |
2,168 | 38.24 |
立即询盘 |
Datasheet |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |||
|
DK025LDIODE GEN PURP 1KV 15.9A TO220 |
10,992 | 0.00 |
立即询盘 |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 4 µs | 20 µA @ 1000 V | 1000 V | 15.9A | -40°C ~ 125°C | 1.6 V @ 15.9 A | |||
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|
D8015L56DIODE GEN PURP 800V 9.5A TO220 |
13,150 | 0.00 |
立即询盘 |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 4 µs | 20 µA @ 800 V | 800 V | 9.5A | -40°C ~ 125°C | 1.6 V @ 9.5 A | |||
|
|
D6020LDIODE GEN PURP 600V 12.7A TO220 |
12,432 | 0.00 |
立即询盘 |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 4 µs | 10 µA @ 600 V | 600 V | 12.7A | -40°C ~ 125°C | 1.6 V @ 12.7 A | |||
|
|
D4025LDIODE GEN PURP 400V 15.9A TO220 |
13,624 | 0.00 |
立即询盘 |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 4 µs | 10 µA @ 400 V | 400 V | 15.9A | -40°C ~ 125°C | 1.6 V @ 15.9 A | |||
|
LFUSCD04065ADIODE SIC SCHOTTKY 650V 4A TO220 |
13,765 | 0.00 |
立即询盘 |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 125pF @ 1V, 1MHz | 0 ns | 170 µA @ 650 V | 650 V | 4A (DC) | 175°C (Max) | 1.7 V @ 4 A | |||
|
|
LFUSCD10065ADIODE SIC SCHOTKY 650V 10A TO220 |
10,366 | 0.00 |
立即询盘 |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 290pF @ 1V, 1MHz | 0 ns | 250 µA @ 650 V | 650 V | 10A (DC) | 175°C (Max) | 1.7 V @ 10 A | |||
|
|
LFUSCD05120ADIODE SC SCHOTTKY 1200V 5A TO220 |
10,965 | 0.00 |
立即询盘 |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 260pF @ 1V, 1MHz | 0 ns | 190 µA @ 1200 V | 1200 V | 5A (DC) | 175°C (Max) | 1.7 V @ 5 A | |||
|
|
LFUSCD15120ADIODE SC SCHOTKY 1200V 15A TO220 |
12,357 | 0.00 |
立即询盘 |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 750pF @ 1V, 1MHz | 0 ns | 375 µA @ 1200 V | 1200 V | 15A (DC) | 175°C (Max) | 1.7 V @ 15 A | |||
|
LFUSCD16065BDIODE SIC SCHOTKY 650V 16A TO247 |
10,828 | 0.00 |
立即询盘 |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 520pF @ 1V, 1MHz | 0 ns | 460 µA @ 650 V | 650 V | 16A (DC) | 175°C (Max) | 1.7 V @ 16 A | |||
|
|
LFUSCD20065BDIODE SIC SCHOTKY 650V 20A TO247 |
11,946 | 0.00 |
立即询盘 |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 580pF @ 1V, 1MHz | 0 ns | 500 µA @ 650 V | 650 V | 20A (DC) | 175°C (Max) | 1.7 V @ 20 A | |||
|
|
1255-WBXCDIODE |
10,134 | 0.00 |
立即询盘 |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||||
|
LSIC2SD120A15DIODE SIC SCHOTTKY 1200V 15A |
10,683 | 0.00 |
立即询盘 |
Datasheet |
Tube | Gen2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 920pF @ 1V, 1MHz | 0 ns | 100 µA @ 1200 V | 1200 V | 44A (DC) | -55°C ~ 175°C | 1.8 V @ 15 A | ||
|
|
LSIC2SD120A20DIODE SIC SCHOTTKY 1200V 20A |
11,835 | 0.00 |
立即询盘 |
Datasheet |
Tube | Gen2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 1142pF @ 1V, 1MHz | 0 ns | 100 µA @ 1200 V | 1200 V | 54.5A (DC) | -55°C ~ 175°C | 1.8 V @ 20 A | ||
|
LSIC2SD120C08DIODE SIC SCHOTTKY 1200V 8A |
13,854 | 0.00 |
立即询盘 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Gen2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Surface Mount | 454pF @ 1V, 1MHz | 0 ns | 100 µA @ 1200 V | 1200 V | 24.5A (DC) | -55°C ~ 175°C | 1.8 V @ 8 A | ||
|
LSIC2SD120D20SCHOTTKY DIODE SIC 1200V 20A |
10,605 | 0.00 |
立即询盘 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Gen2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Surface Mount | 1142pF @ 1V, 1MHz | 0 ns | 100 µA @ 1200 V | 1200 V | 54.5A (DC) | -55°C ~ 175°C | 1.8 V @ 20 A |
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