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| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Package / Case | Capacitance @ Vr, F | Supplier Device Package | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MURF860DIODE GEN PURP 600V 8A ITO220AC |
14,112 | 0.82 |
立即询盘 |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 50 ns | 5 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 2.2 V @ 8 A | |||
|
ST2080STRDIODE SCHOTTKY 80V TO277B |
14,830 | 0.82 |
立即询盘 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 300 µA @ 80 V | 80 V | - | -55°C ~ 150°C | 700 mV @ 20 A | |||
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|
406DMQ200POWER MODULE 200V PRM4-ISO |
4,381 | 74.72 |
立即询盘 |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Chassis Mount | 3000pF @ 5V, 1MHz | - | 10 mA @ 200 V | 200 V | 200A | -55°C ~ 175°C | 990 mV @ 200 A | |||
|
1N4148TADIODE GEN PURP 75V 300MA DO35 |
14,947 | 0.13 |
立即询盘 |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 4pF @ 0V, 1MHz | 4 ns | 5 µA @ 75 V | 75 V | 300mA (DC) | -65°C ~ 175°C | 1 V @ 10 mA | ||||
|
S3D30065D1DIODE SCHOTTKY SILICON CARBIDE S |
3,214 | 10.14 |
立即询盘 |
Tube | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||||
|
|
S3D30065HDIODE SCHOTTKY SILICON CARBIDE S |
4,597 | 10.38 |
立即询盘 |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1705pF @ 1V, 100kHz | 0 ns | 200 µA @ 650 V | 650 V | 30A | -55°C ~ 175°C | 1.75 V @ 30 A | |||
|
|
S4D20120ADIODE SCHOTTKY SILICON CARBIDE S |
4,678 | 10.70 |
立即询盘 |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 721pF @ 0V, 1MHz | 0 ns | 40 µA @ 1200 V | 1200 V | 20A | -55°C ~ 175°C | 1.8 V @ 20 A | ||||
|
S4D20120HDIODE SCHOTTKY SILICON CARBIDE S |
4,771 | 11.17 |
立即询盘 |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 721pF @ 0V, 1MHz | 0 ns | 40 µA @ 1200 V | 1200 V | 20A | -55°C ~ 175°C | 1.8 V @ 20 A | |||
|
|
S3D35065D1DIODE SCHOTTKY SILICON CARBIDE S |
3,554 | 11.56 |
立即询盘 |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 2000pF @ 0V, 1MHz | 0 ns | 45 µA @ 650 V | 650 V | 35A | -55°C ~ 175°C | 1.7 V @ 35 A | ||||
|
|
50HQ04560A, 45V, DO-5, SCHOTTKY RECTIFI |
1,146 | 16.61 |
立即询盘 |
Box | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||||
|
63SPD100A100V 60A PACKAGE MINI SPD-4 SCHO |
2,237 | 27.98 |
立即询盘 |
Datasheet |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1200pF @ 5V, 1MHz | - | 1 mA @ 100 V | 100 V | 60A | -55°C ~ 175°C | - | |||
|
FR605GTADIODE GPP 600V 6A R-6 |
12,378 | 0.18 |
立即询盘 |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 150pF @ 4V, 1MHz | 250 ns | 10 µA @ 420 V | 600 V | 6A | -65°C ~ 150°C | 1.3 V @ 6 A | |||
|
|
6A6GTADIODE GEN PURP 600V 6A R-6 |
14,131 | 0.00 |
立即询盘 |
Datasheet |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 150pF @ 4V, 1MHz | - | 10 µA @ 600 V | 600 V | 6A | -65°C ~ 175°C | 950 mV @ 6 A | |||
|
30WQ15FNTRDIODE SCHOTTKY 150V DPAK |
11,831 | 0.46 |
立即询盘 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 60pF @ 5V, 1MHz | - | 1 mA @ 150 V | 150 V | - | -40°C ~ 175°C | 830 mV @ 3 A | |||
|
SDURF10P100B1000V10AUFRPACKAGE ITO-220AC |
7,732 | 1.79 |
立即询盘 |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 100 ns | 10 µA @ 1000 V | 1000 V | 10A | -55°C ~ 150°C | 1.8 V @ 10 A | |||
|
|
S3D03065ETRDIODE SCHOTTKY SILICON CARBIDE S |
7,318 | 1.81 |
立即询盘 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 179pF @ 0V, 1MHz | 0 ns | 5 µA @ 650 V | 650 V | 3A | -55°C ~ 175°C | 1.7 V @ 3 A | |||
|
SDUR30Q60W600V30AUFRPACKAGE TO-247AC |
5,431 | 1.81 |
立即询盘 |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 40 ns | 10 µA @ 600 V | 600 V | 30A | -55°C ~ 150°C | 1.8 V @ 30 A | |||
|
|
S4D02120ETRDIODE SCHOTTKY SILICON CARBIDE S |
6,843 | 1.87 |
立即询盘 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 116pF @ 0V, 1MHz | 0 ns | 10 µA @ 1200 V | 1200 V | 2A | -55°C ~ 175°C | 1.8 V @ 2 A | |||
|
S3DTRDIODE GEN PURP 200V 3A SMC |
13,917 | 0.47 |
立即询盘 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 2.5 µs | 5 µA @ 200 V | 200 V | 3A | -65°C ~ 175°C | 1.1 V @ 3 A | |||
|
|
STD5100TRDIODE SCHOTTKY 100V DPAK |
12,991 | 0.47 |
立即询盘 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 120 µA @ 100 V | 100 V | - | -55°C ~ 150°C | 750 mV @ 5 A |
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