图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Package / Case | Capacitance @ Vr, F | Supplier Device Package | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If |
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1N3768RDIODE GEN PURP REV 1KV 35A DO5 |
2,722 | 13.04 |
立即询盘 |
![]() Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 50 V | 1000 V | 35A | -65°C ~ 190°C | 1.2 V @ 35 A | |||
|
S85JDIODE GEN PURP 600V 85A DO5 |
1,467 | 18.32 |
立即询盘 |
![]() Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 600 V | 85A | -65°C ~ 180°C | 1.1 V @ 85 A | |||
|
S85VRDIODE GEN PURP REV 1.4KV 85A DO5 |
2,881 | 18.66 |
立即询盘 |
![]() Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 1400 V | 85A | -65°C ~ 150°C | 1.1 V @ 85 A | |||
|
MBR3560RDIODE SCHOTTKY REV 60V DO4 |
3,381 | 21.48 |
立即询盘 |
![]() Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 1.5 mA @ 20 V | 60 V | 35A | -55°C ~ 150°C | 750 mV @ 35 A | |||
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GD10MPS12A1200V 10A TO-220-2 SIC SCHOTTKY |
8,279 | 5.16 |
立即询盘 |
![]() Datasheet |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 367pF @ 1V, 1MHz | 0 ns | 5 µA @ 1200 V | 1200 V | 25A (DC) | -55°C ~ 175°C | 1.8 V @ 10 A | ||
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GD05MPS17H1700V 5A TO-247-2 SIC SCHOTTKY M |
6,846 | 6.21 |
立即询盘 |
![]() Datasheet |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 361pF @ 1V, 1MHz | 0 ns | 5 µA @ 1700 V | 1700 V | 16A (DC) | 175°C | 1.8 V @ 5 A | ||
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GB05MPS17-2631700V 5A TO-263-7 SIC SCHOTTKY M |
8,440 | 7.64 |
立即询盘 |
![]() Datasheet |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 470pF @ 1V, 1MHz | - | - | 1700 V | 18A (DC) | -55°C ~ 175°C | - | ||
|
1N1190ARDIODE GEN PURP REV 600V 40A DO5 |
4,101 | 11.78 |
立即询盘 |
![]() Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 50 V | 600 V | 40A | -65°C ~ 190°C | 1.1 V @ 40 A | |||
|
S85JRDIODE GEN PURP REV 600V 85A DO5 |
1,062 | 18.32 |
立即询盘 |
![]() Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 600 V | 85A | -65°C ~ 180°C | 1.1 V @ 85 A | |||
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GD25MPS17H1700V 25A TO-247-2 SIC SCHOTTKY |
3,279 | 18.60 |
立即询盘 |
![]() Datasheet |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1.083nF @ 1V, 1MHz | 0 ns | 5 µA @ 1700 V | 1700 V | 60A (DC) | -55°C ~ 175°C | 1.8 V @ 25 A | ||
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GE04MPS06A650V 4A TO-220-2 SIC SCHOTTKY MP |
9,206 | 2.62 |
立即询盘 |
![]() Datasheet |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 186pF @ 1V, 1MHz | 0 ns | 5 µA @ 650 V | 650 V | 9A (DC) | -55°C ~ 175°C | 1.35 V @ 4 A | ||
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GE06MPS06A650V 6A TO-220-2 SIC SCHOTTKY MP |
7,679 | 2.63 |
立即询盘 |
![]() Datasheet |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 279pF @ 1V, 1MHz | - | - | 650 V | 12A (DC) | -55°C ~ 175°C | - | ||
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GD10MPS12H1200V 10A TO-247-2 SIC SCHOTTKY |
7,059 | 6.37 |
立即询盘 |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | - | 0 ns | - | 1200 V | 10A (DC) | 175°C | - | |||
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GD30MPS06H650V 30A TO-247-2 SIC SCHOTTKY M |
6,433 | 6.55 |
立即询盘 |
![]() Datasheet |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 735pF @ 1V, 1MHz | - | - | 650 V | 49A (DC) | -55°C ~ 175°C | - | ||
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GD30MPS06A650V 30A TO-220-2 SIC SCHOTTKY M |
6,736 | 6.56 |
立即询盘 |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | - | 0 ns | - | 650 V | 30A (DC) | 175°C | - | |||
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GE08MPS06A650V 8A TO-220-2 SIC SCHOTTKY MP |
6,789 | 3.02 |
立即询盘 |
![]() Datasheet |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 373pF @ 1V, 1MHz | - | - | 650 V | 15A (DC) | -55°C ~ 175°C | - | ||
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GD30MPS06J650V 30A TO-263-7 SIC SCHOTTKY M |
5,098 | 7.43 |
立即询盘 |
![]() Datasheet |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 735pF @ 1V, 1MHz | - | - | 650 V | 51A (DC) | -55°C ~ 175°C | - | ||
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GE10MPS06A650V 10A TO-220-2 SIC SCHOTTKY M |
6,613 | 3.45 |
立即询盘 |
![]() Datasheet |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 466pF @ 1V, 1MHz | - | - | 650 V | 19A (DC) | -55°C ~ 175°C | - | ||
|
GB02SHT03-46DIODE SCHOTTKY 300V 4A |
1,792 | 51.78 |
立即询盘 |
![]() Datasheet |
Bulk | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 76pF @ 1V, 1MHz | 0 ns | 5 µA @ 300 V | 300 V | 4A (DC) | -55°C ~ 225°C | 1.6 V @ 1 A | |||
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S300YDIODE GEN PURP 1.6KV 300A DO9 |
2,557 | 73.15 |
立即询盘 |
![]() Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 1600 V | 1600 V | 300A | -60°C ~ 180°C | 1.2 V @ 300 A |