上传BOM单
400-966-0015
sales@cooltat.com.hk
欢迎来到 诺亚方舟半导体（深圳）有限公司
| Manufacturer | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Reset All
Apply All
Results:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
S2M0080120DMOSFET SILICON CARBIDE SIC 1200V |
4,418 | 15.48 |
立即询盘 |
Tube | - | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 41A (Tc) | 20V | 100mOhm @ 20A, 20V | 4V @ 10mA | 54 nC @ 20 V | +25V, -10V | 1324 pF @ 1000 V | - | 231W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
|
|
S2M0080120KMOSFET SILICON CARBIDE SIC 1200V |
3,384 | 15.93 |
立即询盘 |
Tube | - | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 41A (Tc) | 20V | 100mOhm @ 20A, 20V | 4V @ 10mA | 54 nC @ 20 V | +25V, -10V | 1324 pF @ 1000 V | - | 231W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
|
|
S2M0025120DMOSFET SILICON CARBIDE SIC 1200V |
4,987 | 46.13 |
立即询盘 |
Tube | - | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 63A (Tj) | 20V | 34mOhm @ 50A, 20V | 4V @ 15mA | 130 nC @ 20 V | +25V, -10V | 4402 pF @ 1000 V | - | 446W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
|
|
S2M0025120KMOSFET SILICON CARBIDE SIC 1200V |
2,572 | 46.51 |
立即询盘 |
Tube | - | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 63A (Tc) | 20V | 34mOhm @ 50A, 20V | 4V @ 15mA | 130 nC @ 20 V | +25V, -10V | 4402 pF @ 1000 V | - | 446W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
Request a Quote
